Field effect transistor and semiconductor device

ABSTRACT

A field effect transistor includes: a semiconductor region including a first inactive region, an active region, and a second inactive region arranged side by side in a first direction; a gate electrode, a source electrode, and a drain electrode on the active region; a gate pad on the first inactive region; a gate guard on and in contact with the semiconductor region, the gate guard being apart from the gate pad and located between an edge on the first inactive region side of the semiconductor region and the gate pad; a drain pad on the second inactive region; a drain guard on and in contact with the semiconductor region, the drain guard being apart from the drain pad and located between an edge on the second inactive region side of the semiconductor region and the drain pad; and a metal film electrically connected to the gate guard.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority from JapaneseApplication No. JP2019-035726 filed on Feb. 28, 2019, the entirecontents of which are incorporated herein by references.

TECHNICAL FIELD

The present disclosure relates to a field effect transistor and asemiconductor device.

BACKGROUND

Japanese Unexamined Patent Publication No. 2010-177550 describes atechnology relating to a semiconductor device. The semiconductor devicedisclosed in this document includes a semiconductor chip, two electrodepads arranged on the semiconductor chip, and a conductive guard ringarranged between the two electrode pads and the outer periphery on thesemiconductor chip. By eliminating a part of the guard ring, the guardring is divided into a plurality of unit regions insulated from eachother.

SUMMARY

There is provided a field effect transistor and a semiconductor deviceaccording to one embodiment, including: a substrate including a mainsurface and a back surface; a semiconductor region on the main surface,the semiconductor region including a first inactive region, an activeregion, and a second inactive region arranged side by side in a firstdirection; a gate electrode, a source electrode, and a drain electrodeon the active region; a gate pad on the first inactive region andelectrically connected to the gate electrode; a gate guard on and incontact with the semiconductor region, the gate guard being apart fromthe gate pad and located between the gate pad and an edge on the firstinactive region side of a pair of edges of the semiconductor regionarranged side by side in the first direction; a drain pad on the secondinactive region and electrically connected to the drain electrode; adrain guard on and in contact with the semiconductor region, the drainguard being apart from the drain pad and located between the drain padand an edge on the second inactive region side of the pair of edges ofthe semiconductor region; and a metal film on the back surface andelectrically connected to the gate guard. The drain guard is in anon-conductive state with respect to the metal film, the gate electrode,the source electrode, and the drain electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a configuration of a field effecttransistor (hereinafter, simply referred to as a transistor) accordingto the first embodiment;

FIG. 2 is a sectional view taken along the line II-II in FIG. 1;

FIG. 3 is a sectional view taken along the line III-III in FIG. 1;

FIG. 4 is a sectional view taken along the line IV-IV in FIG. 1;

FIG. 5A is a cross-sectional view showing a typical step of amanufacturing method according to the first embodiment, and shows across section corresponding to the line II-II in FIG. 1;

FIG. 5B is a cross-sectional view showing a typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line III-III in FIG. 1;

FIG. 5C is a cross-sectional view showing a typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line IV-IV in FIG. 1;

FIG. 6A is a cross-sectional view showing a typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line II-II in FIG. 1;

FIG. 6B is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line III-III in FIG. 1;

FIG. 6C is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line IV-IV in FIG. 1;

FIG. 7A is a cross-sectional view showing a typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line II-II in FIG. 1;

FIG. 7B is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line III-III in FIG. 1;

FIG. 7C is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line IV-IV in FIG. 1;

FIG. 8A is a cross-sectional view showing a typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line II-II in FIG. 1;

FIG. 8B is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line III-III in FIG. 1;

FIG. 8C is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line IV-IV in FIG. 1;

FIG. 9A is a cross-sectional view showing a typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line II-II in FIG. 1;

FIG. 9B is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line III-III in FIG. 1;

FIG. 9C is a cross-sectional view showing the typical step of themanufacturing method according to the first embodiment, and shows across section corresponding to the line IV-IV in FIG. 1;

FIG. 10 is a partial cross-sectional view of a transistor according to amodification, and shows a cross section corresponding to the line II-IIshown in FIG. 1; and

FIG. 11 is a plan view showing a configuration of a semiconductor deviceaccording to the second embodiment.

DETAILED DESCRIPTION Problem to be Solved by the Present Disclosure

A field effect transistor includes a semiconductor region forming a mainsurface of a substrate, and a gate electrode, a source electrode, and adrain electrode provided on an active region in the semiconductorregion. Wires extend from these electrodes, and the tips of the wiresare connected to pads for wire bonding. For example, a gate padconnected to the gate electrode is provided on an inactive regionlocated on one side with respect to the active region. A drain padconnected to the drain electrode is provided on an inactive regionlocated on the other side with respect to the active region. A metalfilm is provided on the back surface of the substrate, and the backmetal film is conductively bonded to a metal base member via aconductive bonding material. In many cases, the base member is definedat a reference potential (ground potential).

The following problems occur in the field effect transistor having theabove configuration. In one use example, a negative voltage lower thanthe reference potential is applied to the gate electrode. Therefore, anelectric field with the gate pad side being negative is generatedbetween the gate pad and the base member. In a humid environment, ionmigration of a metal (for example, Ag, Au, Cu) contained in theconductive bonding material between the base member and the back metalfilm is likely to occur due to this electric field. The ion migration isa phenomenon in which ionized metal moves on the surface of a substancein an electric field. The metal ions move by being attracted by theelectric field, return to the metal from the ionized state for somereason, and accumulate to form dendrites. If the dendrites of metal growfrom the conductive bonding material and the gate pad and the back metalfilm are short-circuited, the operation of the semiconductor device maybe defective. Therefore, the present disclosure has an object to reducea short circuit between a back metal film and a gate pad due to ionmigration of a metal contained in a conductive bonding material, andprovide a field effect transistor and a semiconductor device that canimprove the moisture resistance of the field effect transistor.

Effect of the Embodiment of the Present Disclosure

According to the present disclosure, it is possible to reduce to a shortcircuit between the back metal film and the gate pad due to ionmigration of a metal contained in the conductive bonding material, andprovide the field effect transistor and the semiconductor device thatcan improve the moisture resistance of the field effect transistor.

Description of Embodiments of the Present Disclosure

First, the details of the embodiments of the present disclosure will belisted and described. One embodiment of the present disclosure is afield effect transistor, including: a semiconductor region provided on amain surface of a substrate and including a first inactive region, anactive region, and a second inactive region arranged side by side in afirst direction; a gate electrode, a source electrode, and a drainelectrode provided on the active region; a gate pad provided on thefirst inactive region and electrically connected to the gate electrode;a gate guard made of metal, provided on and in contact with thesemiconductor region so as to be apart from the gate pad between thegate pad and an edge on the first inactive region side of a pair ofedges of the semiconductor region arranged side by side in the firstdirection; a drain pad provided on the second inactive region andelectrically connected to the drain electrode; and a drain guard made ofmetal, provided on and in contact with the semiconductor region so as tobe apart from the drain pad between the drain pad and an edge on thesecond inactive region side of the pair of edges of the semiconductorregion. The gate guard is electrically connected to a metal filmprovided on the back surface of the substrate, and the drain guard is ina non-conductive state with respect to the metal film, the gateelectrode, the source electrode, and the drain electrode.

The source electrode may be electrically connected to the metal film viaa wire penetrating the substrate and the semiconductor region, and thegate guard may be electrically connected to the source electrode.

The field effect transistor further includes a source pad arranged onthe first inactive region side by side with the gate pad, andelectrically connected to the source electrode, and the gate guard mayextend from the source pad along the edge on the first inactive regionside.

The field effect transistor may further include an insulating filmhaving openings on the drain pad and the gate pad, and the gate guardand the drain guard may be covered with the insulating film.

Another embodiment of the present disclosure is a semiconductor device,including: the field effect transistor; a base member having a metalsurface and mounting the field effect transistor; and a conductivebonding material interposed between a metal film of the field effecttransistor and a surface of the base member and containing at least oneof Ag, Au, and Cu.

A package housing the field effect transistor may have a non-hermeticstructure.

Specific examples of the field effect transistor and the semiconductordevice according to the present disclosure will be described below withreference to the drawings. The present disclosure is not limited tothese examples, but is indicated by the appended claims, and is intendedto include any modifications within the scope and meaning equivalent tothe appended claims. In the following description, the same elementswill be denoted by the same reference symbols in the description of thedrawings, and redundant description is omitted.

First Embodiment

FIG. 1 is a plan view showing a configuration of a field effecttransistor (hereinafter, simply referred to as a transistor) 1Aaccording to the first embodiment. FIG. 2 is a sectional view takenalong the line II-II in FIG. 1. FIG. 3 is a sectional view taken alongthe line III-III in FIG. 1. FIG. 4 is a sectional view taken along theline IV-IV in FIG. 1. As shown in FIGS. 1 to 4, the transistor 1Aincludes a substrate 3, insulating films 5 to 9, gate electrodes 21,source electrodes 22, drain electrodes 23, gate pads 31, a source pad32, drain pads 33, and field plates 35 (see FIG. 4), metal vias 44 (seeFIG. 2), and a back metal film 45.

The substrate 3 includes a flat main surface 3 a and a flat back surface3 b located on the opposite side of the main surface 3 a. The substrate3 includes a growth substrate 30 and a nitride semiconductor layer 4provided on a main surface 30 a of growth substrate 30. The growthsubstrate 30 is, for example, a SiC substrate and includes a backsurface 30 b. The back surface 30 b of the growth substrate 30 coincideswith the back surface 3 b of the substrate 3. The growth substrate 30 isused for epitaxial growth of the nitride semiconductor layer 4.

The nitride semiconductor layer 4 is an example of a semiconductorregion in the present embodiment, and is an epitaxial layer formed onthe main surface 30 a of the growth substrate 30. The nitridesemiconductor layer 4 forms the main surface 3 a of the substrate 3.When the transistor 1A is a high electron mobility transistor (HEMT),the nitride semiconductor layer 4 includes, for example, an AlN bufferlayer in contact with the main surface 30 a, a GaN channel layerprovided on the AlN buffer layer, an AlGaN (or InAlN) barrier layerprovided on the GaN channel layer, and a GaN cap layer provided on thebarrier layer. The AlN buffer layer is undoped and has a thickness inthe range of, for example, 10 nm to 20 nm. The GaN channel layer isundoped and has a thickness in the range of, for example, 0.4 μm to 1.2μm. The barrier layer has a thickness in the range of, for example, 10nm to 30 nm. However, in the case of the InAlN barrier layer, itsthickness is set smaller than 20 nm. The GaN cap layer is n-type and hasa thickness of, for example, 5 nm.

As shown in FIG. 1, the nitride semiconductor layer 4 includes an activeregion 4 a and an inactive region 4 b provided around the active region4 a. The active region 4 a is a region that operates as a transistor.The inactive region 4 b is a region that is electrically inactivated byimplanting ions (protons) such as argon (Ar) into the nitridesemiconductor layer 4. The inactive region 4 b is provided forelectrical isolation between the transistors 1A adjacent to each otherand for limiting an operation region of the transistor 1A. The inactiveregion 4 b includes a first inactive region 4 ba located on one side inthe direction D1 (first direction) along the main surface 3 a withrespect to the active region 4 a, and a second inactive region 4 bblocated on the other side in the direction D1 with respect to the activeregion 4 a. That is, the first inactive region 4 ba, the active region 4a, and the second inactive region 4 bb are arranged side by side in thisorder in the direction D1.

The insulating films 5 to 9 constitute an insulating laminated structurelocated on the nitride semiconductor layer 4. The insulating films 5 to9 are provided over substantially the entire surface on the activeregion 4 a and the inactive region 4 b. The insulating films 5 to 9mainly include, for example, silicon compounds such as SiN, SiO₂, andSiON. In the present embodiment, the insulating films 5 to 9 are incontact with each other, but another layer may be provided at least oneof the portions between the layers.

The plurality of source electrodes 22 are provided on the active region4 a of the nitride semiconductor layer 4, and form an ohmic contact withthe active region 4 a of the nitride semiconductor layer 4 through anopening 51 (see FIG. 4) formed in the insulating film 5. As shown inFIG. 1, the plurality of source electrodes 22 are arranged side by sidealong the direction D2 (second direction) intersecting (for example,orthogonal) to the direction D1, and the planar shape of each sourceelectrode 22 is a rectangular shape whose longitudinal direction is thedirection D1. The source electrode 22 is formed by alloying a laminatedstructure including, for example, a Ti layer, an Al layer, and a Tilayer (or a Ta layer, an Al layer, and a Ta layer), and mainly containsAl.

The plurality of drain electrodes 23 are provided on the active region 4a of the nitride semiconductor layer 4, and form an ohmic contact withthe active region 4 a of the nitride semiconductor layer 4 through anopening formed in the insulating film 5. As shown in FIG. 1, the drainelectrodes 23 are alternately arranged with the source electrodes 22along the direction D2, and the planar shape of each drain electrodes 23is a rectangular shape whose longitudinal direction is the direction D1.The drain electrode 23 is also formed by alloying a laminated structureincluding, for example, a Ti layer, an Al layer, and a Ti layer (or a Talayer, an Al layer, and a Ta layer), and mainly contains Al.

The gate electrode 21 includes a plurality of portions (finger portions)provided on the active region 4 a of the nitride semiconductor layer 4,and a portion extending on first inactive region 4 ba. The fingerportion of each gate electrode 21 extends along the direction D1 and islocated between the source electrode 22 and the drain electrode 23. Thefinger portions of these gate electrodes 21 make Schottky contact withthe active region 4 a of nitride semiconductor layer 4. The contactwidth (gate length) between the gate electrode 21 and the nitridesemiconductor layer 4 in the direction D2 is, for example, 0.5 μm. Thegate electrode 21 has a laminated structure including a Ni layer and anAu layer on the Ni layer. In one example, the Ni layer is in contactwith the nitride semiconductor layer 4, and the Au layer is in contactwith the Ni layer. Alternatively, a Pd layer may be interposed betweenthe Ni layer and the Au layer.

The field plate 35 is a metal film provided along the gate electrode 21.As shown in FIG. 4, an insulating film 7 is interposed between the fieldplate 35 and the gate electrode 21. The field plate 35 has, for example,a laminated structure of a Ti layer (or Ta layer) and an Au layer.

The gate pad 31 is a metal film provided on a portion of the gateelectrode 21 on the first inactive region 4 ba, and is electricallyconnected to the gate electrode 21 by being in contact with the gateelectrode 21 through an opening formed in the insulating films 7 and 8.In the present embodiment, the plurality of gate pads 31 are arrangedside by side in the direction D2. Each gate pad 31 is electricallyconnected to an external wire via a bonding wire. Therefore, the surfaceof each gate pad 31 is exposed from the opening of the insulating film9. Each gate pad 31 has a laminated structure including, for example, aTiW layer and an Au layer on the TiW layer.

The source pad 32 is a metal film provided over a part including theactive region 4 a and the first inactive region 4 ba of the nitridesemiconductor layer 4. The source pad 32 of the present embodimentincludes portions arranged alternately with the gate pads 31 in thedirection D2, and portions (finger portions) extending over the sourceelectrodes 22 and covering the source electrodes 22. The source pad 32is electrically connected to each source electrode 22 by being incontact with each source electrode 22 at the finger portion. Theportions of the source pads 32 which are arranged side by side with thegate pads 31 are each exposed from the opening of the insulating film 9,and are each electrically connected to the back metal film 45 throughthe metal via 44 (see FIG. 2) penetrating the substrate 3. The sourcepad 32 of the present embodiment includes lower layers 32 a (see FIG. 2)in contact with the nitride semiconductor layer 4. The lower layers 32 aare used to stop etching when through holes 3 c for forming the metalvias 44 are formed in the substrate 3. The lower layer 32 a has the samelaminated structure as the gate electrode 21, for example. The remainingpart of each source pad 32 excluding the lower layer 32 a has the samelaminated structure as the gate pad 31, for example, a laminatedstructure including a TiW layer and an Au layer on the TiW layer. Thislaminated structure is in contact with the nitride semiconductor layer 4around the lower layer 32 a.

The metal via 44 is a wire provided in the through hole 3 c penetratingthe substrate 3 (the growth substrate 30 and the nitride semiconductorlayer 4) from the back surface 3 b to the main surface 3 a. The metalvia 44 reaches the source pad 32 from the back surface 3 b of thesubstrate 3 and is in contact with the source pad 32. The metal vias 44are provided for electrically connecting the back metal film 45 providedon the back surface 3 b and the source electrodes 22 with a lowresistance through the source pad 32. When the transistor 1A is mountedon a base member defined at the ground potential (reference potential),the base member and the back metal film 45 are electrically connected toeach other via a conductive bonding material such as a sintered-type Agpaste. As a result, the ground potential is applied to the sourceelectrodes 22.

The drain pads 33 are each a metal film provided over a part includingthe second inactive region 4 bb and the active region 4 a of the nitridesemiconductor layer 4. The drain pad 33 has the same laminated structureas the gate pad 31 and the source pad 32, for example, a laminatedstructure including a TiW layer and an Au layer on the TiW layer. Thedrain pad 33 includes portions (finger portions) extending over thedrain electrodes 23 and covering the drain electrodes 23 respectively,and is electrically connected to each drain electrode 23 by being incontact with each drain electrode 23. Further, a portion provided on thesecond inactive region 4 bb in the drain pad 33 has, for example, arectangular shape whose longitudinal direction is the direction D2, andis electrically connected to an external wire via a bonding wire.Therefore, the surface of the portion of the drain pad 33 is exposedfrom the opening of the insulating film 9.

The transistor 1A of the present embodiment further includes a gateguard 11 and a drain guard 12 provided on the main surface 3 a (on thenitride semiconductor layer 4). The gate guard 11 is made of a metalfilm, fills the openings formed in the insulating films 5 to 8, and isin contact with the first inactive region 4 ba of the nitridesemiconductor layer 4. The gate guard 11 is provided between an edge 3aa, which is located on the first inactive region 4 ba side of a pair ofedges 3 aa and 3 ab (in other words, a pair of edges of the nitridesemiconductor layer 4) of the main surface 3 a arranged side by side inthe direction D1, and the gate pads 31. The gate guard 11 is apart fromboth the edge 3 aa and the gate pads 31. In the illustrated example, thegate guard 11 extends mainly along the direction D2 (along the edge 3 aaof the main surface 3 a). Further, the gate guard 11 includes a portion11 a extending along a side edge 3 ac of the main surface and a portion11 b extending along aside edge 3 ad of the main surface 3 a. Theportions 11 a and 11 b are arranged side by side in the direction D2.These portions 11 a and 11 b extend from the vicinity of the edge 3 aa,and along the side edges 3 ac and 3 ad in the direction D1,respectively. The gate guard 11 has such a planar shape, and thussurrounds a pad group including the plurality of gate pads 31 from threesides.

The gate guard 11 is electrically connected to the source pad 32 with alow resistance through wires 13 provided respectively corresponding tothe plurality of source pads 32 arranged side by side in the directionD2, and is electrically connected to the source electrodes 22 via thesource pad 32. In the present embodiment, the gate guard 11 extends fromthe source pad 32 along the edge 3 aa of the main surface 3 a. The gateguard 11 is electrically connected to the back metal film 45 with a lowresistance via the wires 13, the source pad 32, and the metal vias 44,and is defined at the same potential (for example, a referencepotential) as the source electrodes 22.

Referring to FIG. 3, the contact width W1 between gate guard 11 and mainsurface 3 a in a direction intersecting with the extending direction ofthe gate guard 11 is, for example, in a range of 1 μm to 10 μm, and is 6μm in one embodiment. The distance L1 between the gate guard 11 and thegate electrode 21 on the main surface 3 a is, for example, in a range of5 μm to 20 μm, and is 15 μm in one embodiment. The distance L2 betweenthe gate guard 11 and the end surface (edge 3 aa) of the substrate 3 is,for example, in a range of 5 μm to 40 μm, and is 25 μm in oneembodiment. The height h1 of the gate guard 11 with respect to the mainsurface 3 a (equal to the thickness of the gate guard 11 in the presentembodiment) is, for example, in a range of 2 μm to 8 μm, and is 4 μm inone example.

The drain guard 12 is made of a metal film, fills the openings formed inthe insulating films 5 to 8, and is in contact with the second inactiveregion 4 bb of the nitride semiconductor layer 4. The drain guard 12 isprovided between the edge 3 ab of the main surface 3 a on the secondinactive region 4 bb side and the drain pads 33 so as to be apart fromboth the edge 3 ab and the drain pads 33. In the illustrated example,the drain guard 12 extends mainly along the direction D2 (along the edge3 ab of the main surface 3 a). The drain guard 12 includes a portion 12a extending along the side edge 3 ac and a portion 12 b extending alongof the side edge 3 ad. These portions 12 a and 12 b extend from thevicinity of the edge 3 ab, and along the side edges 3 ac and 3 ad in thedirection D1, respectively. The drain guard 12 has such a planar shape,and thus surrounds a pad group including the plurality of drain pads 33from three sides.

The drain guard 12 is in a non-conductive state with respect to the backmetal film 45, the gate electrodes 21, the source electrodes 22, and thedrain electrodes 23. That is, the drain guard 12 is insulated from theback metal film 45, the gate electrodes 21, the source electrodes 22,and the drain electrodes 23. The drain guard 12 of the presentembodiment is connected to the electrodes 21 to 23 and the back metalfilm 45 via the second inactive region 4 bb of the nitride semiconductorlayer 4 and the insulating films (dielectric bodies) 5 to 9. During theoperation of the transistor 1A, the potential of the drain guard 12 is avalue dividing the potential difference between the drain pads 33 andthe back metal film 45 in accordance with the ratio of the resistancevalue between the drain pads 33 and the drain guard 12 and theresistance value between the back metal film 45 and the drain guard 12.Since the distance between the drain pads 33 and the drain guard 12 isshorter than the distance between the back metal film 45 and the drainguard 12, the potential of the drain guard 12 is close to the potentialof the drain pads 33.

The contact width between the drain guard 12 and the main surface 3 a inthe direction intersecting with the extending direction of the drainguard 12 is, for example, in a range of 1 μm to 10 μm, and is 6 μm inone embodiment. The distance between the drain guard 12 and the drainpad 33 on the main surface 3 a is, for example, in a range of 5 μm to 20μm, and is 15 μm in one embodiment. The distance between the drain guard12 and the end surface (edge 3 ab) of the substrate 3 is, for example,in a range of 5 μm to 40 μm, and is 25 μm in one embodiment. The heightof the drain guard 12 with respect to the main surface 3 a (equal to thethickness of the drain guard 12 in the present embodiment) is, forexample, in a range of 2 μm to 8 μm, and is 4 μm in one example.

The gate guard 11 and the drain guard 12 are formed simultaneously withthe gate pads 31, the source pad 32, and the drain pads 33, and are madeof the same material as these pads 31 to 33. That is, the gate guard 11and the drain guard 12 of the present embodiment have the same laminatedstructure as the pads 31 to 33, for example, a laminated structureincluding a TiW layer and an Au layer on the TiW layer. The gate guard11 and the drain guard 12 are covered with the insulating film 9.

A method for manufacturing the transistor 1A of the present embodimenthaving the above structure will be described. FIGS. 5A to 9C arecross-sectional views showing typical steps of the manufacturing methodaccording to the present embodiment. FIGS. 5A, 6A, 7A, 8A, and 9A showcross sections corresponding to the line II-II in FIG. 1. FIGS. 5B, 6B,7B, 8B, and 9B show cross sections corresponding to the line III-III.FIGS. 5C, 6C, 7C, 8C, and 9C show cross sections corresponding to theline IV-IV.

First, the nitride semiconductor layer 4 is formed on the growthsubstrate 30, and the substrate 3 is manufactured. Specifically, first,an AlN buffer layer is epitaxially grown on the growth substrate 30, aGaN channel layer is epitaxially grown thereon, an AlGaN (or InAlN)barrier layer is epitaxially grown thereon, and a GaN cap layer isepitaxially grown thereon. Then, the inactive region 4 b is formed byion-implanting Ar⁺ into a part of the nitride semiconductor layer 4excluding the active region 4 a. Thus, the substrate 3 shown in FIGS. 1to 4 is manufactured.

Next, as shown in FIGS. 5A to 5C, the insulating film 5 is deposited onthe main surface 3 a of the substrate 3. For example, when theinsulating film 5 is made of a silicon compound such as SiN, theinsulating film 5 is deposited by a plasma CVD method or a low pressureCVD (LPCVD) method. In the case of LPCVD, the film forming temperatureis, for example, 850° C., and the film forming pressure is, for example,10 Pa or less. The raw materials for forming the film are, for example,NH₃ and SiH₂Cl₂. The thickness of the insulating film 5 is, for example,in a range of 60 nm to 100 nm, and is 60 nm in one embodiment.

Subsequently, as shown in FIG. 6C, openings 51 corresponding to thesource electrodes 22 are formed in the insulating film 5. At the sametime, other openings corresponding to the drain electrodes 23 are formedin the insulating film 5. Specifically, a resist mask having an openingpattern corresponding to these openings are formed on the insulatingfilm 5, and the insulating film 5 is etched through the opening patternto form these openings. After that, the source electrodes 22 are formedin the openings 51 by using a lift-off method, and the drain electrodes23 are formed in other openings. That is, with the resist mask left,each metal layer (for example, Ti/Al/Ti, or Ta/Al/Ta) for the sourceelectrodes 22 and the drain electrodes 23 is sequentially depositedusing a physical vapor deposition method or the like. The thickness ofeach Ti layer (or Ta layer) is, for example, in a range of 10 nm to 30nm (10 nm in one embodiment), and the thickness of the Al layer is, forexample, in a range of 200 nm to 400 nm (300 nm in one embodiment).After the metal material deposited on the resist mask is removedtogether with the resist mask, heat treatment (annealing) is performedat a temperature in a range of 500° C. to 600° C. (550° C. in oneembodiment) to alloy the source electrodes 22 and the drain electrode23. The time for maintaining the temperature in the range of 500° C. to600° C. is, for example, 1 minute.

Subsequently, as shown in FIGS. 6A to 6C, the insulating film 6 coveringthe insulating film 5, the source electrodes 22, and the drainelectrodes 23 is deposited. For example, when the insulating film 6 ismade of a silicon compound such as SiN, the insulating film 6 isdeposited by a plasma CVD method. The film forming temperature is, forexample, 300° C., and the film forming materials are, for example, NH₃and SiH₄. The thickness of the insulating film 6 is, for example, 100nm. By this step, the region where the gate electrodes 21 are to beformed is covered with the double insulating films 5 and 6.

Subsequently, the lower layers 32 a of the source pad 32 and the gateelectrodes 21 are formed. First, a resist for an electron beam (EBresist) is deposited on the insulating film 6, and an opening patternfor the gate electrodes 21 and the lower layers 32 a of the source pad32 is formed in the EB resist by EB writing. Next, by continuouslyetching the insulating film 6 and the insulating film 5 through theopening pattern of the EB resist, openings 52 and 53 penetrating theinsulating films 5 and 6 are formed as shown in FIGS. 7B and 7C toexpose the nitride semiconductor layer 4. Thereafter, the gateelectrodes 21 are formed in the openings 52 and the lower layers 32 a ofthe source pad 32, and at the same time, the lower layers 32 a of thesource pad 32 are formed in the openings 53 by using the lift-offmethod. That is, with the EB resist left, each metal layer (for example,Ni/Au or Ni/Pd/Au) for the gate electrodes 21 and the lower layers 32 aare sequentially deposited by using a physical vapor deposition methodor the like. The thickness of the Ni layer is, for example, in a rangeof 70 nm to 150 nm (100 nm in one embodiment), the thickness of the Pdlayer is, for example, in a range of 50 nm to 100 nm (50 nm in oneembodiment), and the thickness of the Au layer is, for example, in arange of 300 nm to 700 nm (500 nm in one embodiment). Thereafter, themetal material deposited on the EB resist is removed together with theEB resist.

Subsequently, as shown in FIGS. 8A to 8C, the insulating film 7 isdeposited. Initially, the insulating film 7 is formed on the entiresurface on the main surface 3 a, and covers the insulating film 6, thegate electrodes 21, and the lower layers 32 a. For example, when theinsulating film 7 is made of a silicon compound such as SiN, theinsulating film 7 is deposited by a plasma CVD method. The film formingtemperature is, for example, 300° C., and the film forming materialsare, for example, NH₃ and SiH₄. The thickness of the insulating film 7is, for example, 100 nm.

Subsequently, as shown in FIG. 8C, the field plates 35 are formed on theinsulating film 7 along the gate electrodes 21 on the active region 4 a.In this step, the field plates 35 are formed using, for example, alift-off method. That is, a resist mask having an opening patterncorresponding to the planar shapes of the field plates 35 is formed, andeach metal layer (for example, Ti (or Ni)/Au) for the field plates 35 issequentially deposited using a physical vapor deposition method or thelike. In one embodiment, the thickness of the Ti layer (or Ni layer) is10 nm, and the thickness of the Au layer is 200 nm. Thereafter, themetal material deposited on the resist mask is removed together with theresist mask.

Subsequently, an insulating film 8 covering the insulating film 7 andthe field plates 35 is deposited. Initially, the insulating film 8 isformed on the entire main surface 3 a. For example, when the insulatingfilm 8 is made of a silicon compound such as SiN, the insulating film 8is deposited by a plasma CVD method. The film forming temperature is,for example, 300° C., and the film forming materials are, for example,NH₃ and SiH₄. The thickness of the insulating film 8 is, for example,200 nm to 500 nm.

Subsequently, as shown in FIG. 8A, the insulating films 7 and 8 on thelower layers 32 a are removed by etching to form openings, and the lowerlayers 32 a are exposed. At this time, by continuously etching theinsulating films 5 to 8 around the lower layers 32 a, the nitridesemiconductor layer 4 around the lower layers 32 a is exposed. At thesame time, the insulating films 5 to 8 in regions corresponding to thesource pad 32 and the drain pads 33 are removed by etching to formopenings. Those openings include regions on the source electrodes 22 andregions on the drain electrodes 23, as shown in FIG. 8C, and in theregions, the source electrodes 22 and the drain electrodes 23 areexposed. Those openings include regions corresponding to the source pad32 and the drain pads 33 on the inactive region 4 b, and in the regions,the nitride semiconductor layer 4 is exposed. At the same time, as shownin FIG. 8B, the insulating films 7 and 8 in the regions corresponding tothe gate pads 31 are removed by etching to form openings 55, and thegate electrodes 21 are exposed. Further, in this step, as shown in FIGS.8A and 8B, the insulating films 5 to 8 in the region corresponding tothe gate guard 11 are removed by etching to form an opening 54, and thenitride semiconductor layer 4 is exposed. At the same time, theinsulating films 5 to 8 in the region corresponding to the drain guard12 are removed by etching to form an opening, and the nitridesemiconductor layer 4 is exposed. Specifically, a resist mask having anopening pattern corresponding to the above openings is formed on theinsulating film 8, and the insulating films 5 to 8 are etched throughthe opening pattern to form these openings.

After the resist mask is removed, as shown in FIGS. 9A to 9C, the gateguard 11, the drain guard 12, the wires 13, the gate pads 31, the sourcepad 32, and the drain pads 33 are simultaneously formed. Specifically, aseed metal layer (Ti/TiW/Ti/Au) is formed on the entire main surface 3 aby a sputtering method. The thickness of each Ti layer is, for example,10 nm, the thickness of the TiW layer is, for example, 100 nm, and thethickness of the Au layer is, for example, 100 nm. Then, a resist maskhaving openings in regions where the gate guard 11, the drain guard 12,the wires 13, the gate pads 31, the source pad 32, and the drain pads 33are to be formed is formed on the seed metal layer. Thereafter, anelectrolytic plating process is performed to form an Au layer in eachopening of the resist mask. At this time, the thickness of the Au layeris, for example, 3 μm. After the plating process, the resist mask isremoved, and the exposed seed metal layer is removed.

Subsequently, an insulating film (passivation film) 9 is deposited onthe entire surface on the main surface 3 a. For example, when theinsulating film 9 is made of a silicon compound such as SiN, theinsulating film 9 is deposited by a plasma CVD method. The film formingtemperature is, for example, 300° C., and the film forming materialsare, for example, NH₃ and SiH₄. The thickness of the insulating film 9is, for example, 200 nm to 500 nm. After that, openings of theinsulating film 9 are formed on the gate pads 31, the source pad 32, andthe drain pads 33 in the inactive region 4 b to expose the gate pads 31,the source pad 32, and the drain pads 33, respectively. Thus, theprocess on the main surface 3 a side is completed.

Subsequently, a protective resist is formed on the main surface 3 a byspin coating, and the resist covers all components on the main surface 3a. Then, a support substrate is attached to the resist. The supportsubstrate is, for example, a glass plate. Then, the back surface 3 b ofthe substrate 3 is polished to thin the substrate 3. At this time, forexample, the growth substrate 30 having a thickness of 500 μm is thinnedto 100 μm.

Subsequently, a seed metal film (for example, TiW/Au) is formed on theback surface 3 b and the side surfaces of the substrate 3 by, forexample, a sputtering method. After a resist pattern is formed atpositions overlapped with the lower layers 32 a of the source pad 32, aNi mask is formed by performing a Ni plating process. After that, theresist pattern is removed, and the exposed seed metal film is removed byetching. Thereby, the regions of the back surface 3 b overlapped withthe lower layers 32 a are exposed through the openings of the Ni mask.When the seed metal film is made of TiW/Au, the seed metal film can beeasily removed by reactive ion etching (RIF) using a fluorine-based gas.

Subsequently, the through holes 3 c (see FIG. 2) are formed in thesubstrate 3 by etching the growth substrate 30 and the nitridesemiconductor layer 4 through the openings of the Ni mask. The throughholes 3 c reach the lower layers 32 a from the back surface 3 b of thesubstrate 3. Thereby, the lower layers 32 a are exposed to the backsurface 3 b through the through holes 3 c. Then, a seed metal film (forexample, TiW/Au) is formed on the back surface 3 b of the substrate 3and on the inner surfaces of the through holes 3 c (including on theexposed lower layers 32 a) by, for example, a sputtering method. Byperforming plating on the seed metal film, the back metal film 45 isformed on the back surface 3 b, and the metal vias 44 reaching the lowerlayers 32 a from the back surface 3 b are formed in the through holes 3c. Finally, the components on the main surface 3 a side of the substrate3 are separated from the support substrate. After the substrate productsincluding the substrate 3 taken out are cleaned, dicing is performedalong scribe lines to separate individual chips from each other. Throughthe above steps, the transistor 1A of the present embodiment iscompleted.

An effect obtained by the transistor 1A of the present embodimentdescribed above will be described together with a conventional problem.Usually, the back metal film 45 is conductively bonded to a metal basemember via a conductive bonding material. In many cases, the base memberis set to a reference potential (ground potential). In this case, when anegative voltage lower than the reference potential is applied to thegate electrodes 21, an electric field with the gate pads 31 side beingnegative is generated between the gate pads 31 and the base member. In ahumid environment, ion migration of a metal (for example, Ag, Au, Cu)contained in the conductive bonding material is likely to occur due tothis electric field. The Ion migration is a phenomenon in which ionizedmetal moves on the surface of a substance between electric fields. Themetal ions move by being attracted by the electric field, return to themetal from the ionized state for some reason, and accumulate to formdendrites. If the dendrites of metal grow from the conductive bondingmaterial and the gate pads 31 and the back metal film 45 areshort-circuited, the operation of the transistor may be defective.

In recent years, wide-gap semiconductor devices using GaN, SiC, Ga₂O₃,and the like as main semiconductor materials have been activelydeveloped and are being put into practical use. Since wide-gapsemiconductor devices have a high withstand voltage, the performance ofthe semiconductor is enhanced by increasing the power supply voltage toincrease the mobility. reducing the parasitic capacitance between theelectrodes, and the like. For this reason, in a wide-gap semiconductordevice, the above-mentioned electric field becomes strong, and ionmigration easily occurs.

Therefore, the transistor 1A of the present embodiment includes the gateguard 11 between the edge 3 aa of the main surface 3 a and the gate pads31. The gate guard 11 is electrically connected to the back metal film45 and is defined at the same potential (for example, a referencepotential) as the back metal film 45. As a result, an electric field ismainly generated between the gate guard 11 and the gate pads 31, and anelectric field generated between the gate guard 11 and the back metalfilm 45 is small. Therefore, since the force for moving metal ionsbetween the gate guard 11 and the back metal film 45 is extremely weak,the growth of dendrites on the side surfaces of the substrate 3 can besuppressed, and the short circuit between the back metal film 45 and thegate pads 31 can be reduced.

The transistor 1A of the present embodiment includes the drain guard 12between the edge 3 ab of the main surface 3 a and the drain pads 33.Thus, the entry of moisture into the active region 4 a can be suppressedtogether with the gate guard 11, and the moisture resistance of thetransistor 1A can be improved. Here, if the drain guard 12 iselectrically connected to the gate guard 11 with a low resistance, thefollowing problem occurs. Usually, a positive bias voltage is applied tothe drain electrodes 23. In the case of a transistor using GaN as a mainsemiconductor material, the bias voltage to the drain electrodes 23 is ahigh voltage exceeding, for example, 50V. When the drain guard 12 iselectrically connected to the gate guard 11, the drain guard 12 isdefined at the same potential (for example, a reference potential) asthe back metal film 45. Since the drain guard 12 is arranged close tothe drain pads 33, the electric field between the drain guard 12 and thedrain pads 33 increases. The surfaces of the drain pads 33 are exposedfrom the openings of the insulating film 9, and moisture enters theboundary between the insulating film 9 and the drain pads 33. Theelectric field accelerates the entry of moisture between the drain guard12 and the drain pads 33. Therefore, the moisture resistance of thetransistor 1A is decreased.

To solve this problem, in the present embodiment, the drain guard 12 isin a non-conductive state with respect to the back metal film 45, thegate electrodes 21, the source electrodes 22, and the drain electrodes23. In this case, the electric field between the drain guard 12 and thedrain pads 33 can be reduced as compared with the case where the drainguard 12 is electrically connected to the gate guard 11 with lowresistance. Therefore, the decrease in the moisture resistance of thetransistor 1A can be suppressed.

As in the present embodiment, the source pad 32 may be arranged side byside with the gate pads 31 on the first inactive region 4 ba, and thegate guard 11 may extend from the source pad 32 along the edge 3 aa onthe first inactive region 4 ba side. For example, with such aconfiguration, the gate guard 11 can be electrically connected to thesource electrodes 22, and the gate guard 11 can be arranged between thegate pads 31 and the edge 3 aa.

As in the present embodiment, the gate guard 11 and the drain guard 12may be covered with the insulating film 9 having openings on the drainpads 33 and the gate pads 31. In this case, the moisture resistance ofthe transistor 1A can be further improved.

(Modification)

FIG. 10 is a partial cross-sectional view of a transistor 1B accordingto a modification of the above embodiment, and shows a cross sectioncorresponding to the line II-II shown in FIG. 1. In the presentmodification, unlike the above embodiment, the insulating films 5 to 8are not interposed between the wires 13 connecting the gate guard 11 andthe source pad 32 and the nitride semiconductor layer 4, and the wires13 and the nitride semiconductor layer 4 are in contact with each other.That is, the wires 13 of the present modification are formed directly onthe exposed nitride semiconductor layer 4. In this case, the wires 13each function as a part of the gate guard 11, and the effect of theabove embodiment can be made more remarkable.

Second Embodiment

FIG. 11 is a plan view showing a configuration of a semiconductor device100 according to the second embodiment. FIG. 11 shows a state where alid of the semiconductor device 100 is removed. The semiconductor device100 includes the transistors 1A of the first embodiment, a package 101,input matching circuits 106, output matching circuits 108, and outputcapacitors 109. The transistors 1A, the input matching circuits 106, theoutput matching circuits 108, and the output capacitors 109 are housedin the package 101. The package 101 has a non-hermetic structure inwhich hermetic sealing is not performed.

The package 101 includes a base member 103, a side wall 104, two inputleads 150, and two output leads 160. The base member 103 is aplate-shaped member including a flat main surface 103 a made of metal.The base member 103 is made of, for example, copper, an alloy of copperand molybdenum, an alloy of copper and tungsten, or a laminated materialof a copper plate, a molybdenum plate, a tungsten plate, an alloy plateof copper and molybdenum, and an alloy plate of copper and tungsten. Thesurface of the base material of the base member 103 is plated withnickel chrome (nichrome)-gold, nickel-gold, nickel-palladium-gold,silver or nickel, or nickel-palladium. Gold, silver, and palladium areplating materials, and NiCr and Ni are seed materials. Adhesion can beenhanced when the plating material and the seed material are included,as compared with the case where only the plating material is used. Thethickness of the base member 103 is, for example, 0.5 mm to 1.5 mm. Theplanar shape of the base member 103 is, for example, a rectangularshape.

The side wall 104 is a substantially rectangular frame-shaped membermade of ceramic as a dielectric body. The side wall 104 includes a pairof portions 141 and 142 facing each other in the direction D1 along themain surface 103 a of the base member 103, and a pair of portions 143and 144 facing each other in the direction D2 crossing the direction D1.The portions 141 and 142 extend parallel to each other along thedirection D2, and the portions 143 and 144 extend parallel to each otheralong the direction D1. The cross section of each of the portions 141 to144 perpendicular to the extending direction is rectangular or square.The height of the side wall 104 in the normal direction of the mainsurface 103 a is, for example, 0.5 mm to 1.0 mm. The side wall 104 iscoupled with the main surface 103 a of the base member 103 via anadhesive material such as a silver braze.

The input lead 150 and the output lead 160 are metal plate-shapedmembers, and in one example, are metal sheets of copper, copper alloy,or iron alloy. The input lead 150 has one end in the direction D1coupled with the upper surface of the portion 141 of the side wall 104.The input lead 150 is insulated from the main surface 103 a of the basemember 103 by the portion 141 of the side wall 104. The output lead 160has one end in the direction D1 coupled with the upper surface of theportion 142 of the side wall 104. The output lead 160 is insulated fromthe main surface 103 a of the base member 103 by the portion 142 of theside wall 104.

The transistors 1A, the input matching circuits 106, the output matchingcircuits 108, and the output capacitors 109 are mounted on a regionsurrounded by the side wall 104 on the main surface 3 a of the basemember 103. The input matching circuits 106, the transistors 1A, theoutput matching circuits 108, and the output capacitors 109 are providedin this order from the portion 141 of the side wall 104. The inputmatching circuits 106 and the output matching circuits 108 are, forexample, parallel plate type capacitors each having electrodes on theupper and lower surfaces of a ceramic substrate.

The input matching circuits 106, the transistors 1A, and the outputmatching circuits 108 are fixed on the base member 103 with a conductivebonding material such as a sintered-type conductive paste. Theconductive bonding material includes at least one of Ag, Au, and Cu. Inone embodiment, the conductive bonding material is obtained by sinteringa sintered-type Ag paste. The conductive bonding material for fixing thetransistor 1A is interposed between the back metal film 45 of thetransistor 1A and the main surface 103 a of the base member 103, andelectrically connects and strongly connects them. The input matchingcircuits 106 are mounted on the input side of the transistors 1A, andthe output matching circuits 108 are mounted on the output side of thetransistors 1A, respectively. the input matching circuits 106 and thetransistors 1A, the transistors 1A and the output matching circuits 108,the output matching circuits 108 and the output capacitors 109, and theoutput capacitors 109 and the output leads 160 are electricallyconnected with corresponding wires (not shown).

The input matching circuits 106 perform impedance matching between theinput leads 150 and the transistors 1A. One ends of the input matchingcircuits 106 are electrically connected to the input leads 150 viabonding wires. The other ends of the input matching circuits 106 areelectrically connected to the gate pads 31 (see FIG. 1) of thetransistors 1A via bonding wires.

The output matching circuits 108 perform impedance matching between thetransistors 1A and an external circuit. The output matching circuits 108perform matching so that desired output, efficiency, and frequencycharacteristics are obtained. One ends of the output matching circuits108 are electrically connected to the drain pads 33 (see FIG. 1) of thetransistors 1A via bonding wires. The other ends of the output matchingcircuits 108 are electrically connected to the output leads 160 viabonding wired and the output capacitors 109.

The semiconductor device 100 of the present embodiment includes thetransistor 1A of the first embodiment. Therefore, the growth ofdendrites due to ion migration of the conductive bonding materialinterposed between the transistor 1A and the main surface 103 a of thebase member 103 can be suppressed, and the short circuit between themain surface 103 a of the base member 103 and the gate pads 31 can bereduced. The entry of moisture into the active region 4 a can besuppressed, and the moisture resistance of the transistor 1A can beimproved. When the package 101 that houses the transistor 1A has anon-hermetic structure as in the present embodiment, the usefulness ofthe transistor 1A becomes more remarkable.

The field effect transistor and the semiconductor device according tothe present disclosure are not limited to the above-describedembodiments, and various other modifications may be made thereto. Forexample, in the above embodiments, the metal vias 44 are providedimmediately below the source pad 32 in the inactive region 4 b, but maybe provided immediately below the source electrodes 22 in the activeregion 4 a (or immediately below the openings formed in the sourceelectrodes 22). In the above embodiments, the gate guard 11 includes theportions 11 a and 11 b, and the drain guard 12 includes the portions 12a and 12 b, but at least one of these portions may be omitted asnecessary. In the above embodiments, the gate guard 11, the drain guard12, and the source pad 32 have the same configuration and are formed atthe same time. However, they may have different configurations and maybe formed at different timings.

1-14. (canceled)
 15. A field effect transistor comprising: a substrateincluding a main surface and a back surface; a semiconductor region onthe main surface, the semiconductor region including an inactive regionand an active region; a gate electrode, a source electrode, and a drainelectrode on the active region; a drain pad on the inactive region andelectrically connected to the drain electrode; and a drain guard on andin contact with the inactive region of the semiconductor region, thedrain guard being apart from the drain pad, wherein the drain guard isin a non-conductive state with respect to the gate electrode, the sourceelectrode and the drain electrode.
 16. The field effect transistoraccording to claim 15, further comprising an insulating film coveringthe drain guard.
 17. The field effect transistor according to claim 15,wherein the drain guard is formed of metal.
 18. The field effecttransistor according to claim 15, wherein the drain pad is connectedwith a plurality of drain electrodes.
 19. The field effect transistoraccording to claim 15, wherein a plurality of drain pads are arranged onthe inactive region.
 20. The field effect transistor according to claim15, wherein the field effect transistor is mounted on a base member witha conductive bonding material.
 21. The field effect transistor accordingto claim 30, wherein the conductive bonding material includes at leastone of Ag, Au, and Cu.
 22. A field effect transistor comprising: asubstrate including a main surface and a back surface; a semiconductorregion on the main surface, the semiconductor region including an edge,an inactive region, and an active region arranged side by side in afirst direction; a gate electrode, a source electrode, and a drainelectrode on the active region; a drain pad on the inactive region andelectrically connected to the drain electrode; and a drain guard on andin contact with the inactive region of the semiconductor region, thedrain guard being apart from the drain pad and located between the drainpad and the edge, wherein the drain guard is electrically insulated fromthe gate electrode, the source electrode and the drain electrode. 23.The field effect transistor according to claim 22, further comprising aninsulating film covering the drain guard.
 24. The field effecttransistor according to claim 22, further comprising: a gate padelectrically connected to the gate electrode; and an insulating filmhaving a first opening on the drain pad and a second opening on the gatepad, wherein the drain guard is covered with the insulating film. 25.The field effect transistor according to claim 22, wherein the drainguard is formed of metal.
 26. The field effect transistor according toclaim 22, wherein the drain pad is connected with a plurality of drainelectrodes.
 27. The field effect transistor according to claim 22,wherein a plurality of drain pads are arranged in the inactive region.28. The field effect transistor according to claim 22, wherein the fieldeffect transistor is mounted on a base member with a conductive bondingmaterial.
 29. The field effect transistor according to claim 31, whereinthe conductive bonding material includes at least one of Ag, Au, and Cu.30. The field effect transistor according to claim 20, wherein theconductive bonding material is a sintered-type conductive paste.
 31. Thefield effect transistor according to claim 28, wherein the conductivebonding material is a sintered-type conductive paste.